PART |
Description |
Maker |
SG75S12S |
Discrete IGBTs
|
Sirectifier Global Corp.
|
SG45N12T |
Discrete IGBTs
|
Sirectifier Semiconduct... Sirectifier Semiconductors Sirectifier Global Corp.
|
SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors Sirectifier Global Corp.
|
GT40WR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IXBT42N170A IXBH42N170A |
Discrete IGBTs BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs 8A 500V P-Channel IGBTs Mechanism, 2-inch w/front paper feed and partial cutter 8A/ 500V P-Channel IGBTs
|
http:// INTERSIL[Intersil Corporation]
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
|
Infineon
|
IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|